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| SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. A KHB3D0N70P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB3D0N70P O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q FEATURES VDSS= 700V, ID= 3A Drain-Source ON Resistance : RDS(ON)= 3.5 @VGS = 10V K M L J D N N P Qg(typ.) = 20.5nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) RATING SYMBOL KHB3D0N70P KHB3D0N70F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 137 1.04 150 -55 150 N 1 2 3 1. GATE 2. DRAIN 3. SOURCE UNIT 700 30 3.0 12 345 8.0 4.0 50 0.34 3.0* A 12* E F TO-220AB V V A KHB3D0N70F C O B G P mJ mJ V/ns W W/ D M M K L J Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient H DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 RthJC RthJA 0.91 62.5 2.5 62.5 /W /W * : Drain current limited by maximum junction temperature. TO-220IS D G S 2007. 1. 4 Revision No : 1 1/2 KHB3D0N70P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=700V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=1.5A 700 2.0 1 3.0 4.0 10 100 3.5 V V/ V A nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2007. 1. 4 Revision No : 1 2/2 |
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